منابع مشابه
Demonstration and Modeling of Multi-Bit Resistance Random Access Memory
Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution...
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We examine the primary challenges for building a practical and competitive holographic random access memory (HRAM) system, specifically for size, speed, and cost. We show that a fast HRAM system can be implemented with a compact architecture by incorporating conjugate readout, a pixel-matched sensor array, and a linear array of laser diodes. It provides faster random access time than hard disk ...
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Electronically programmable memory devices utilizing molecular self-assembled monolayers are reported. The devices exhibit electronically programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory is demonstrated. Bit retention times .15 min have been observed. © 2001 American Institute of Physics. @DOI: 10.1063/1.1...
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We examine the present state of holographic random access memory (HRAM) systems and address the primary challenges that face this technology, specifically size, speed, and cost. We show that a fast HRAM system can be implemented with a compact architecture by incorporating conjugate readout, a smart-pixel array, and a linear array of laser diodes. Preliminary experimental results support the fe...
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We present a new data structure called the Compressed Random Access Memory (CRAM) that can store a dynamic string T of characters, e.g., representing the memory of a computer, in compressed form while achieving asymptotically almost-optimal bounds (in terms of empirical entropy) on the compression ratio. It allows short substrings of T to be decompressed and retrieved efficiently and, significa...
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ژورنال
عنوان ژورنال: Materials Today
سال: 2016
ISSN: 1369-7021
DOI: 10.1016/j.mattod.2015.11.009